Recently, a significant breakthrough was achieved in the National 863 Program titled "Study on Several Key Technologies of ZnO-Based Short-Wavelength Lasers," which was jointly conducted by Nanjing University and the Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences. Following three years of intensive research on material growth and fabrication processes, the team successfully developed the world's first ZnO-based homojunction light-emitting diode (LED) capable of emitting blue and yellow light at room temperature (29°C). This achievement marks a major step forward in the field of wide-bandgap semiconductor devices.
The project overcame several critical technical challenges, including the use of metalorganic chemical vapor deposition (MOCVD) for ZnO material growth, the preparation of high-quality ZnO single crystals, the growth of doped ZnO thin films, and the formation of reliable ohmic contacts. These advancements led to the development of key technologies such as ZnO single crystal substrates, MOCVD systems for ZnO, homoepitaxial growth techniques, and in-situ control and activation of p-type doping in ZnO. All of these technologies are independently developed and hold intellectual property rights.
This accomplishment builds upon previous work using an aluminum-magnesium strontium aluminate substrate from Tohoku University in Japan. It also highlights China's growing capabilities in advanced optoelectronic materials and confirms its position at the forefront of international research in ZnO-based light-emitting devices. The successful development of ZnO LEDs through molecular beam epitaxy further demonstrates China’s progress in cutting-edge strategic high-tech fields. This milestone not only enhances scientific knowledge but also opens up new possibilities for future optoelectronic applications.
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