China successfully developed ZnO-based short-wavelength lasers with international advanced level

Recently, a significant breakthrough was achieved in the National 863 Program titled "Study on Several Key Technologies of ZnO-Based Short-Wavelength Lasers," which was jointly conducted by Nanjing University and the Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences. Following three years of intensive research on material growth and fabrication processes, the team successfully developed the world's first ZnO-based homojunction light-emitting device (LED) capable of emitting blue and yellow light at room temperature (29°C). This milestone marks a major step forward in the development of ZnO-based optoelectronic devices. The achievement overcame several critical technical challenges, including the use of metalorganic chemical vapor deposition (MOCVD) equipment for ZnO material growth, the preparation of high-quality ZnO single crystals, the growth of ZnO thin films with controlled doping, and the creation of reliable ohmic contacts. These advancements have led to the establishment of key technologies such as ZnO single crystal substrate technology, MOCVD system technology for ZnO, homoepitaxial growth techniques, and in-situ control and activation of p-type doping. All these are independent intellectual property rights, built upon the aluminum-magnesium strontium aluminate substrates from Tohoku University in Japan. This accomplishment highlights China's growing expertise in advanced optoelectronics and confirms its position among global leaders in the field of ZnO-based light-emitting devices. It represents not only a scientific milestone but also a strategic advancement in high-tech industries, reinforcing China’s role in cutting-edge technological innovation. The successful development of ZnO LEDs through molecular beam epitaxy further demonstrates the country's capability to compete on the international stage in frontier scientific research.

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